<Ul> <Li> In 2009, Intel announced the development of 80 - nanometer InGaAs quantum well transistors . Quantum well devices contain a material sandwiched between two layers of material with a wider band gap . Despite being double the size of leading pure silicon transistors at the time, the company reported that they performed equally as well while consuming less power . </Li> <Li> In 2011, researchers at Intel demonstrated 3 - D tri-gate InGaAs transistors with improved leakage characteristics compared to traditional planar designs . The company claims that their design achieved the best electrostatics of any III - V compound semiconductor transistor . At the 2015 International Solid - State Circuits Conference, Intel mentioned the use of III - V compounds based on such an architecture for their 7 nanometer node . </Li> <Li> In 2011, researchers at the University of Texas at Austin developed an InGaAs tunneling field - effect transistors capable of higher operating currents than previous designs . The first III - V TFET designs were demonstrated in 2009 by a joint team from Cornell University and Pennsylvania State University . </Li> <Li> In 2012, a team in MIT's Microsystems Technology Laboratories developed a 22 nm transistor based on InGaAs which, at the time, was the smallest non-silicon transistor ever built . The team used techniques currently used in silicon device fabrication and aims for better electrical performance and a reduction to 10 - nanometer scale . </Li> <Li> Research is also showing how biological micro-cells are capable of impressive computational power while being energy efficient . </Li> </Ul> <Li> In 2009, Intel announced the development of 80 - nanometer InGaAs quantum well transistors . Quantum well devices contain a material sandwiched between two layers of material with a wider band gap . Despite being double the size of leading pure silicon transistors at the time, the company reported that they performed equally as well while consuming less power . </Li> <Li> In 2011, researchers at Intel demonstrated 3 - D tri-gate InGaAs transistors with improved leakage characteristics compared to traditional planar designs . The company claims that their design achieved the best electrostatics of any III - V compound semiconductor transistor . At the 2015 International Solid - State Circuits Conference, Intel mentioned the use of III - V compounds based on such an architecture for their 7 nanometer node . </Li> <Li> In 2011, researchers at the University of Texas at Austin developed an InGaAs tunneling field - effect transistors capable of higher operating currents than previous designs . The first III - V TFET designs were demonstrated in 2009 by a joint team from Cornell University and Pennsylvania State University . </Li>

Moore's law describes the pace at which improve