<Dl> <Dd> I = n ⋅ A ⋅ v ⋅ e (\ displaystyle I = n \ cdot A \ cdot v \ cdot e) </Dd> </Dl> <Dd> I = n ⋅ A ⋅ v ⋅ e (\ displaystyle I = n \ cdot A \ cdot v \ cdot e) </Dd> <P> I (\ displaystyle I) = electric current (amperes) n (\ displaystyle n) = density of charge carriers (count / m3) A (\ displaystyle A) = cross-sectional area of the material (m2) v (\ displaystyle v) = drift velocity of electrons (m / s) e (\ displaystyle e) = charge of an electron (e = 1.602 × 10 − 19 (\ displaystyle e = 1.602 \ times 10 ^ (- 19)) coulomb) </P> <P> Over large changes in temperature, calibration is necessary . Over small changes in temperature, if the right semiconductor is used, the resistance of the material is linearly proportional to the temperature . There are many different semiconducting thermistors with a range from about 0.01 kelvin to 2,000 kelvins (− 273.14 ° C to 1,700 ° C). </P>

What is the beta value of a thermistor