<P> One source states that, in 2008, the flash memory industry includes about US $9.1 billion in production and sales . Other sources put the flash memory market at a size of more than US $20 billion in 2006, accounting for more than eight percent of the overall semiconductor market and more than 34 percent of the total semiconductor memory market . In 2012, the market was estimated at $26.8 billion . </P> <P> Due to its relatively simple structure and high demand for higher capacity, NAND flash memory is the most aggressively scaled technology among electronic devices . The heavy competition among the top few manufacturers only adds to the aggressiveness in shrinking the design rule or process technology node . While the expected shrink timeline is a factor of two every three years per original version of Moore's law, this has recently been accelerated in the case of NAND flash to a factor of two every two years . </P> <Table> <Tr> <Th> ITRS or company </Th> <Th> </Th> <Th> 2011 </Th> <Th> 2012 </Th> <Th> 2013 </Th> <Th> 2014 </Th> <Th> 2015 </Th> <Th> 2016 </Th> </Tr> <Tr> <Td> ITRS Flash Roadmap 2011 </Td> <Td> 32 nm </Td> <Td> 22 nm </Td> <Td> 20 nm </Td> <Td> 18 nm </Td> <Td> 16 nm </Td> <Td> </Td> <Td> </Td> </Tr> <Tr> <Td> Updated ITRS Flash Roadmap </Td> <Td> </Td> <Td> </Td> <Td> </Td> <Td> </Td> <Td> 17 nm </Td> <Td> 15 nm </Td> <Td> 14 nm </Td> </Tr> <Tr> <Td> Samsung Samsung 3D NAND </Td> <Td> 35--32 nm </Td> <Td> 27 nm </Td> <Td> 21 nm (MLC, TLC) </Td> <Td> 19 nm </Td> <Td> 19--16 nm V - NAND (24L) </Td> <Td> 12 nm V - NAND (32L) </Td> <Td> 12 nm </Td> </Tr> <Tr> <Td> Micron, Intel </Td> <Td> 34--25 nm </Td> <Td> 25 nm </Td> <Td> 20 nm (MLC + HKMG) </Td> <Td> 20 nm (TLC) </Td> <Td> 16 nm </Td> <Td> 3D NAND </Td> <Td> 3D NAND Gen2 </Td> </Tr> <Tr> <Td> Toshiba, Sandisk </Td> <Td> 43--32 nm </Td> <Td> 24 nm </Td> <Td> 19 nm (MLC, TLC) </Td> <Td> </Td> <Td> 15 nm </Td> <Td> 3D NAND BiCS </Td> <Td> 3D NAND BiCS </Td> </Tr> <Tr> <Td> SK Hynix </Td> <Td> 46--35 nm </Td> <Td> 26 nm </Td> <Td> 20 nm (MLC) </Td> <Td> </Td> <Td> 16 nm </Td> <Td> </Td> <Td> </Td> </Tr> </Table> <Tr> <Th> ITRS or company </Th> <Th> </Th> <Th> 2011 </Th> <Th> 2012 </Th> <Th> 2013 </Th> <Th> 2014 </Th> <Th> 2015 </Th> <Th> 2016 </Th> </Tr>

How can the size of the flash eeprom be decided